Renewables
JEDEC Qualified 600V GaN HEMT from Transphorm
Transphorm have revealed the JEDEC qualification of the company’s TPH2006PS, GaN HEMT on SiC substrate, making it the industry’s first qualified 600V HEMT device. The TPH2006PS, based on its patented, high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, today.
The “Our team has accomplished the first qualification of a 600 Volt GaN Transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm” said Primit Parikh, President of Transphorm. “This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified.”
Transphorm’s efficient, compact, and easy-to-use solutions simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles. For customers looking for a low-risk roadmap to the next generation of power conversion technology, Transphorm’s proprietary EZ-GaN provides a cost-effective, customizable and easy-to-use solution ready for commercial scale.
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