Cree

Address:
4600 Silicon Drive
Durham

NC 27703
United States of America

Phone: 001 (919) 313-5300

Fax: 001 (919) 313-5558

Web: www.cree.com

Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications.


Cree articles

Displaying 1 - 5 of 5

SiC devices enable tiny solar inverters with 99% efficiency

SiC devices enable tiny solar inverters with 99% efficiency
Cree has demonstrated that its SiC MOSFET and diode technologies enable previously unattainable levels of power density in string solar inverter products, yielding efficiencies greater than 99.1% at peak, at 20% of the average size and weight of today’s silicon-based inverter units.
17th March 2015

SiC MOSFETs selected for use within solar converter

SiC MOSFETs selected for use within solar converter
SiC MOSFETs, manufactured by Cree, have been selected by Sanix for use within its 9.9kW three-phase solar inverter. The 80Ω C2M0080120D MOSFETs will be utilised in the primary power conversion stage of the solar inverter, which is designed for use in the construction of commercial photovoltaic systems in the Japanese solar energy market.
9th September 2014

SiC Schottky diodes are industry’s most powerful, claim Cree

SiC Schottky diodes are industry’s most powerful, claim Cree
Believed to be the industry’s first commercially available family of 50A SiC rectifiers, Cree has announced the CPW5 Z-Rec high-power SiC Schottky diodes. The diodes are suitable for use in high power systems from 50kW to over 1MW, addressing applications such as solar / PV inverters, industrial power supplies, induction heating, battery charging stations, wind turbine converters and traction inverters.
6th March 2014


Cree SiC MOSFETs Enable Next-Generation Solar Inverters

Cree and Delta Energy Systems announce a breakthrough in the photovoltaic inverter industry with the release of Delta’s new generation of solar inverters, which utilize SiC power MOSFETs from Cree. The use of SiC MOSFETs in the next-generation PV inverters can enable significant new milestones in power density, efficiency and weight.
17th April 2013

Cree Announces Second-Generation 1200V SiC MOSFET

Cree has announced the introduction of its second generation SiC MOSFET enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver industry-leading power density and switching efficiency at half the cost per amp of Cree’s previous generation MOSFETs.
13th March 2013


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