A new power semiconductor product line has been announced by IXYS: 200V Ultra-Junction X3-Class HiPerFET Power MOSFETs. The current ratings range from 36-300A; a broad selection of devices are available in a number of international standard packages. Fabricated using a charge compensation principle and IXYS’ own process technology, these new MOSFETs exhibit what the company claims to be the lowest on-state resistances in the industry (3.5m&...

International power and IC semiconductor company, IXYS, has announced that its UK subsidiary introduced a new addition to its family of 4.5kV fast recovery diodes (HP-sonic FRD) with a high rate of change of current capability and soft recovery characteristics. The new diode has a nominal operating current of 460A and is optimised to be used in conjunction with IXYS UK’s range of press-pack IGBTs.

  Power and IC semiconductor company, IXYS has announced an increased maximum voltage and a new low profile package option for its W2624 series rectifier diode. The maximum grade voltage has been increased to 2800V and a new 21mm thick package option has been added to the standard range for this rectifier diode.

Global power and IC semiconductor company, IXYS, has announced that its wholly owned UK subsidiary, IXYS UK Westcode, launched a new range of 4,500V high current fast recovery diodes (HP-sonic FRDs) with nominal operating currents from 1,800-3,000A, to be used in conjunction with IXYS’ family of high current press-pack IGBTs. The new diodes incorporate IXYS UK’s most advanced die bonding technology, where the silicon die is ...

IXYS Corporation, international power and IC semiconductor company has announced a new distributed gate thyristor with increased power density. This new fast thyristor with a turn-off time of 25 microseconds and a current rating of 1605 amperes is symmetrical blocking with forward and reverse voltage up to 2.2kV and therefore suitable for both voltage and current fed applications.

The introduction of the PVX-4000-2kV-EX +/- 2000 V Pulse Generator has been introduced by the IXYS Colorado division of IXYS Corporation. The PVX-4000-2kV-EX is an air-cooled, high voltage pulse generator optimised for high impedance capacitive loads. It is well-suited for driving extraction grids and deflection plates for electrostatic modulation of particle beams in time-of-flight mass spectrometers and accelerators. 

Specialist in power semiconductors and IC technologies for energy efficient products used in power conversion and motor control applications, IXYS, has announced the introduction of the D3Pak-HV package (TO-268HV). This package offers high voltage capability due to the 1,200V rating designed in the creepage distance. The products introduced in the TO-268HV packages are Fast Recovery Epitaxial Diode (FRED) and the faster version High Performance F...

IXYS Corporation a power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications company has announced the introduction of the IXRFD615 ultrafast low-side RF MOSFET gate driver by its IXYS Colorado division. The IXRFD615 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E RF applications as well as other applications requiring ultrafast rise and fall...

Power semiconductor, IXYS has announced the expansion of its portfolio with a Input Rectifier technology that combines high electrical performance and high dynamic ruggedness. High performance rectifiers, above the 1,000V range, utilising highly reliable planar proprietary technology have been core to IXYS’ worldwide leadership in bipolar power products. 

Power semiconductors and integrated circuits manufacturer for energy efficiency, power management, and motor control applications, IXYS Corporation have announced the availability of a new design: 3kW Two-Phase Digital Power Factor Corrector (PFC). It is based on Zilog’s 8-bit Z8F6481 microcontroller, a member of the Z8 Encore XP F6482 series of microcontrollers, and IXYS power transistors and rectifiers.

IXYS Corporation have announced the 1700V and 2500V XPT IGBTs for power management applications. With current ratings ranging from 26-178A, the devices are well suited for high-voltage (HV), high-speed power conversion applications, and devices that are co-packed with anti-parallel fast diodes are also available.

PCIM Europe 2017 Stand 9-305   Two dual 1200V rated SiC Schottky diodes from IXYS are offered in SOT-227 packages for used in power conversion and motor control applications.

IXYS has announced a digital power design that demonstrates surge voltage protection as well as inrush current and short-circuit protection for battery powered devices based on the Zilog MCU.

IXYS has announced that its wholly owned UK subsidiary, IXYS UK Westcode, launched a new range of ‘Wespack’ rectifier diodes in ultra-compact housings. The diodes are in a new package size which offers maximum power density without compromising on performance and quality. Available with voltage from 1.2 kV to 2.8 kV and average current ratings from 1730A to 2340A at a case temperature of 55C, these new diodes offer the highest possibl...

IXYS Integrated Circuits Division announced the immediate availability of the CPC2907B, a dual, normally open (1-Form-A), 60 V, 2 Amp Solid State Relay (SSR) that comprises two independent, optically coupled, bidirectional MOSFET switches. The CPC2907B is the first dual power relay offered by IXYS ICD and features an ultra-low150 milliohm on-resistance. This dual power relay is the industry’s highest rated load-current device in a surface m...

IXYS announces the expansion of its portfolio for Input Rectifiers in SOT-227B Minibloc packages. The Rectifier SOT-227B Minibloc package family belongs to the IXYS product range of high performance Thyristor and Diode technologies for 50/60 Hz applications. With this latest addition IXYS extends the integration of more power in the SOT-227B package for Dual Diode configurations.

IXYS announced an expansion of its low-voltage Trench MOSFET products, 60V TrenchT3 HiPerFET Power MOSFETs. With on-resistance as low as 3.1 milliohms, these devices are designed for high power density, switched-mode power conversion applications. These new MOSFETs can withstand a junction temperature up to 175ºC and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications.

IXYS announced the introduction of the PCX-6425 high power laser diode driver/current source by its IXYS Colorado division. This instrument provides precision pulsed current with accurate microprocessor-based digital power control. The PCX-6425 is an air cooled, bench top high power current source designed to drive laser diodes, bars and arrays at up to 150 amperes of current and 120 V maximum forward voltage.

A manufacturer of power semiconductors and ICs for energy efficiency, power management, medical, transportation and consumer applications, IXYS, has announced the IXRD1004 - High Power Two-Phase Digital Power Factor Correction (PFC) reference design. It is based on Zilog’s 8-bit Z8F6481 microcontroller, a member of the Z8 Encore! XP F6482 series of microcontrollers, and IXYS power transistors and rectifiers.

IXYS Corporation has announced the DVRFD615X2 high speed MOSFET demonstration board. The DVRFD615X2 is a general purpose circuit board designed to simplify the evaluation of the IXRFD615X2 dual high speed MOSFET gate driver, and to provide a building block for power circuit development.