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Toshiba articles

Displaying 1 - 8 of 8

15Mb/s photocoupler features low power consumption

15Mb/s photocoupler features low power consumption
Combining 15Mb/s high-speed communication with low power consumption, Toshiba has launched a photocoupler for applications including PV inverters, servo amplifiers, FA networks and I/O interfaces. The TLP2761 guarantees a minimum creepage and clearance distance of 8mm and minimum isolation voltage of 5000Vrms, making it suitable for applications requiring higher isolation specs.
10th June 2015

IEGT & SiC diode combination improves efficiency

IEGT & SiC diode combination improves efficiency
  Integrating an N-channel IEGT (Injection-Enhanced Gate Transistor) and an SiC fast recovery diode, the MG1500FXF1US71 high-efficiency 3300V, 1500A power module has been introduced by Toshiba Electronics Europe.
25th November 2014

Transmit up to 100m with a drive current of just 6mA

Transmit up to 100m with a drive current of just 6mA
Extending their portfolio of TOSLINK fibre optic modules, the TOxX1350-series from Toshiba supports signal transmission from DC or any data rates up to 10Mb/s. Transmission distances of 40-100m can be achieved with a drive current of only 6mA and it is possible to operate the transmitter with a drive current of only 1.5mA to achieve transmission distances of 0.2-50m.
3rd April 2014

600V super junction MOSFETs for PV inverters

600V super junction MOSFETs for PV inverters
Consisting of the TK31N60X, TK39N60X and TK62N60X, Toshiba has announced the introduction of the DTMOS IV-H series high-speed switching type super junction MOSFETs. The 600V MOSFETs are suitable for applications requiring high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecomms base stations and power conditioners for photovoltaic inverters.
20th March 2014

Toshiba introduces 650V SiC Schottky Barrier Diodes

Toshiba introduces 650V SiC Schottky Barrier Diodes
Toshiba has today announced the extension of its family of 650V silicon carbide Schottky Barrier Diodes with the introduction of 6, 8 and 10A devices, in addition to the 12A SBD that entered volume production earlier in 2013. Toshiba is aiming to address forecasted growth in the SiC power device market with its new offerings.
24th October 2013

Toshiba wins EPC Contract for HVDC power conversion system

Toshiba have announced that Toshiba and Toshiba T&D Europe have won an Engineering, Procurement and Construction contract for a High Voltage and Direct Current power conversion system for an undersea power transmission line between Cepagatti, Italy, and Kotor, Montenegro. The project will deliver a maximum 1,000MW of power to Cepagatti and will contribute to the integration of the Southeastern Europe and EU power grids.
7th December 2012

Toshiba’s 6th Generation 600V IGBTs Improve Hard Switching Efficiency

Toshiba Electronics Europe has announced a sixth generation IGBT technology that offers improved switching loss/conduction loss trade off for increased efficiency and improved performance. The new technology is the basis for a new family of compact 600V devices that will suit a variety of hard switching applications including motor drives, solar inverters and uninterruptible power supplies.
19th November 2012

Toshiba, Kobelco and Keio Univ. to Develop Hybrid Power Control System

Toshiba, Kobe Steel and Keio University have today jointly announced that they have been selected by Japan's Ministry of Environment to develop and verify a hybrid power control system for concentrated solar power, wind turbine and biomass binary power generation.
18th September 2012

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