Toshiba introduces 650V SiC Schottky Barrier Diodes

24th October 2013
Source: Toshiba
Posted By : Nat Bowers
Toshiba introduces 650V SiC Schottky Barrier Diodes

Toshiba has today announced the extension of its family of 650V silicon carbide Schottky Barrier Diodes with the introduction of 6, 8 and 10A devices, in addition to the 12A SBD that entered volume production earlier in 2013. Toshiba is aiming to address forecasted growth in the SiC power device market with its new offerings.

The SBD is suited to applications including power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient.

Significantly reducing heat dissipation during operation, SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.

The Toshiba SBD range features a maximum reverse recovery current (IRRM) of 90µA @ 650V. All devices are housed in TO-220 packages; other packages are planned.


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