IEGT & SiC diode combination improves efficiency

25th November 2014
Source: Toshiba
Posted By : Nat Bowers
IEGT & SiC diode combination improves efficiency

 

Integrating an N-channel IEGT (Injection-Enhanced Gate Transistor) and an SiC fast recovery diode, the MG1500FXF1US71 high-efficiency 3300V, 1500A power module has been introduced by Toshiba Electronics Europe.

The device will save energy, space and weight and reduce acoustic noise in high-power switching inverter and motor control designs for applications including rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.

Use of an SiC Schottky barrier diode significantly decreases reverse recovery current, leading to a corresponding decrease in turn-on loss compared to silicon alternatives. A combination of diode and an improved internal package design to reduce stray inductances allows the MG1500FXF1US71 to operate with a reverse recovery loss up to 97% lower than a module that uses a conventional silicon diode..

The MG1500FXF1US71 offers an isolation voltage rating of 6000VAC (rms for one minute) and can handle a peak turn-off collector current of 3000A. Collector power dissipation (at 25°C) is 5000W.

Operating over a temperature range from -40 to +150°C, the MG1500FXF1US71 is supplied in a package with a footprint of just 140x190mm.

During development the 3300V, 1500A hybrid module was incorporated into a rail traction inverter design. By using the module the overall size of the motor control sub-assembly (including cooling system) was reduced by 40%. The module also helped to reduce acoustic noise and improve ride quality.


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