Competition from Broadcom and Nexperia
Win a GaN-Based Power Switch Evaluation Board
New half-bridge evaluation hardware leverages game-changing high-performance semiconductor devices from Nexperia and Broadcom.
To assist engineers in getting the most from wide bandgap technology, and start transitioning from silicon-centric power system designs, EBV has a total of 50 GaN-based half-bridge evaluation boards to give away.
Highly suited for use in renewable energy inverters and industrial power supplies, these evaluation boards will enable detailed examination of switching characteristics under different scenarios. Each board features advanced components from key EBV semiconductor manufacturing partners.
The half-bridge configuration of the new evaluation board consists of a pair of 650V Nexperia GAN039-650NBB GaN FETs, which use the company’s latest high-voltage GaN HEMT H2 architecture as their foundation. 99% power conversion efficiency levels are achieved. Thanks to their wide bandgap properties, these FETs deliver soft-switching frequencies of up to 1MHz. Under normal operating conditions, their RDS(ON) is only 35mΩ, thus further helping to keep power losses down.
A dual-channel ACFJ-3262 gate drive optocoupler IC from Broadcom drives both the top and bottom bridge GaN FETs directly. It is the industry’s first gate drive optocoupler to attain a 10A current rating. A 100kV/µs minimum common mode rejection (CMR) figure results in enhanced noise immunity. Each of the channels of this device incorporates two outputs for turning on/off its associated GaN FET with exceptional effectiveness. There is a maximum propagation delay of just 95ns. A wide VCC range is supported too - covering 10V to 25V.
Make sure you enter now, for your chance to win one of these GaN power switch evaluation boards by completing the form.