Low-power tech for embedded flash memory to eliminate batteries 12th June 2019

Supplier of advanced semiconductor solutions, Renesas Electronics, has announced the development of new low-power technology for use in embedded flash memory based on a 65 nanometre (nm) SOTB (Silicon On Thin Buried Oxide) process. Available with 1.5 MB capacity, it is an embedded 2T-MONOS (2 Transistors-Metal Oxide Nitride Oxide Silicon) flash memory based on 65nm SOTB technology.






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